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Ultra high purity 7N5 Arsenic 99.999995%

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Ultra high purity 7N5 Arsenic 99.999995%

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Place of Origin :HONGKONG, GERMANY, UNITED KINGDOM, RUSSIA, USA
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Ultra high purity 7N5 Arsenic 99.999995% Arsenic ingots, chunks, and rods are employed as precursor materials for the epitaxial growth of single crystal III/V semiconductor thin films and nanoparticles via molecularbeam epitaxy (MBE) and other techniques.

Ultra high purity 7N5 Arsenic 99.999995%

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